1/8 february 2001 STN1NC60 n-channel 600v - 12 w - 0.3a - sot-223 powermesh?ii mosfet n typical r ds (on) = 12 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first generation of mesh overlay ?. the layout re- finements introduced greatly improve the ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. applications n ac adaptors and battery chargers n swith mode power supplies (smps) absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) i d STN1NC60 600 v <15 w 0.3 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20 k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuos) at t c = 25c 0.3 a i d drain current (continuos) at t c = 100c 0.18 a i dm (1) drain current (pulsed) 1.2 a p tot total dissipation at t c = 25c 2.5 w derating factor 0.02 w/c dv/dt peak diode recovery voltage slope 3 v/ns t stg storage temperature C60 to 150 c t j max. operating junction temperature 150 c (1)i sd 0.3a, di/dt 100a/s, v dd v (br)dss , t j t jmax 1 2 2 3 sot-223 internal schematic diagram
STN1NC60 2/8 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-pcb rthj-amb t l thermal resistance junction-pc board thermal resistance junction-ambient max (surface mounted) maximum lead temperature for soldering purpose 50 60 260 c/w c/w c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 0.3 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 60 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 234v r ds(on) static drain-source on resistance v gs = 10v, i d =0.5 a 12 15 w i d(on) on state drain current v ds > i d(on) x r ds(on)max, v gs =10v 1a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d = 0.5a 0.87 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 108 pf c oss output capacitance 18 pf c rss reverse transfer capacitance 2.5 pf
3/8 STN1NC60 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 300v, i d = 0.5a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 7.2 8 ns ns q g total gate charge v dd = 480v, i d = 1a, v gs = 10v 7.3 10 nc q gs gate-source charge 3.4 nc q gd gate-drain charge 2.5 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 480v, i d = 1a, r g =4.7 w, v gs = 10v (see test circuit, figure 5) 33 ns t f fall time 11 ns t c cross-over time 43 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 0.3 a i sdm (2) source-drain current (pulsed) 1.2 a v sd (1) forward on voltage i sd = 0.3 a, v gs = 0 1.6 v t rr reverse recovery time i sd = 1a, di/dt = 100a/s, v dd = 25v, tj = 150c (see test circuit, figure 5) 450 ns q rr reverse recovery charge 720 c i rrm reverse recovery current 3.2 a thermal impedance safe operating area
STN1NC60 4/8 . gate charge vs gate-source voltage capacitance variations tranconductance output characteristics transfer characteristics static drain-source on resistance
5/8 STN1NC60 normalized on resistance vs temperature normalized gate thereshold voltage vs temp. source-drain diode forward characteristics
STN1NC60 6/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load
7/8 STN1NC60 dim. mm inch min. typ. max. min. typ. max. a 1.80 0.071 b 0.60 0.70 0.80 0.024 0.027 0.031 b1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 d 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 e 3.30 3.50 3.70 0.130 0.138 0.146 h 6.70 7.00 7.30 0.264 0.276 0.287 v10 o 10 o a1 0.02 p008b sot-223 mechanical data
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